Nanoscale Phase Change Memory with Graphene Ribbon Electrodes

Abstract

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of low-power PCM devices with lateral graphene ribbon electrodes: one in which the graphene is patterned into narrow nanoribbons and the other where the phase change material is patterned into nanoribbons. The sharp graphene "edge" contacts enable switching with threshold voltages as low as ~3 V, low programming currents (<1 μA SET, <10 μA RESET) and ON/OFF ratios >100. Large-scale fabrication with graphene grown by chemical vapor deposition also enables the study of heterogeneous integration and that of variability for such nanomaterials and devices.

submitted to Applied Physics Letters

References in corpus (3)

• Metal Oxide Resistive Memory using Graphene Edge Electrode
• Transport in Nanoribbon Interconnects Obtained from Graphene Grown by Chemical Vapor Deposition
• Direct observation of nanometer-scale Joule and Peltier effects in phase change memory devices

Cited by in corpus (4)

• Graphene nanoribbons for quantum electronics
• High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
• Engineering Thermal and Electrical Interface Properties of Phase Change Memory with Monolayer MoS2
• Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact