activity
20142017
most citedAnnealing Free, Clean Graphene Transfer using Alternative Polymer Scaffolds

148 citations · 343 across the 5 of their papers we have counts for

collaborators

5 papers

physics.app-ph2017★ 17 cited

Reducing Graphene Device Variability with Yttrium Sacrificial Layers

Ning C. Wang, Enrique A. Carrion, Maryann C. Tung +1

Graphene technology has made great strides since the material was isolated more than a decade ago. However, despite improvements in growth quality and numerous 'hero' devices, chal…

cond-mat.mtrl-sci2016★ 103 cited

Role of Pressure in the Growth of Hexagonal Boron Nitride Thin Films from Ammonia-Borane

Justin C. Koepke, Joshua D. Wood, Enrique A. Carrion +14

We analyze the optical, chemical, and electrical properties of chemical vapor deposition (CVD) grown hexagonal boron nitride (h-BN) using the precursor ammonia-borane ()…

cond-mat.mes-hall2015★ 39 cited

Nanoscale Phase Change Memory with Graphene Ribbon Electrodes

Ashkan Behnam, Feng Xiong, Andrea Cappelli +9

Phase change memory (PCM) devices are known to reduce in power consumption as the bit volume and contact area of their electrodes are scaled down. Here, we demonstrate two types of…

cond-mat.mtrl-sci2015★ 148 cited

Annealing Free, Clean Graphene Transfer using Alternative Polymer Scaffolds

Joshua D. Wood, Gregory P. Doidge, Enrique A. Carrion +11

We examine the transfer of graphene grown by chemical vapor deposition (CVD) with polymer scaffolds of poly(methyl methacrylate) (PMMA), poly(lactic acid) (PLA), poly(phthalaldehyd…

cond-mat.mtrl-sci2014★ 36 cited

Hysteresis-Free Nanosecond Pulsed Electrical Characterization of Top-Gated Graphene Transistors

Enrique A. Carrion, Andrey Y. Serov, Sharnali Islam +6

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain c…