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Si-Fan Zhang

2 papers hereh-index 11465 citations17 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author1

Across the 1 of 2 papers where every author was matched, so the position is known.

fields
  • cond-mat.mes-hall1
  • cond-mat.mtrl-sci1
same name
  • Si-Fan Zhang — 1 paper, h 0

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedThe effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

63 citations · 96 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.mes-hall2022★ 33 cited

Minimizing the programming power of phase change memory by using graphene nanoribbon edge-contact

Xiujun Wang, Sannian Song, Haomin Wang +15

Nonvolatile phase change random access memory (PCRAM) is regarded as one of promising candidates for emerging mass storage in the era of Big Data. However, relatively high programm…

cond-mat.mtrl-sci2016★ 63 cited

The effect of inserted NiO layer on spin-Hall magnetoresistance in Pt/NiO/YIG heterostructures

T. Shang, Q. F. Zhan, H. L. Yang +10

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y3​…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.