Synthesis of large single-crystal hexagonal boron nitride grains on Cu-Ni alloy

Abstract

Hexagonal boron nitride (h-BN) has attracted significant attention due to its superior properties as well as its potential as an ideal dielectric layer for graphene-based devices. The h-BN films obtained via chemical vapor deposition in earlier reports are always polycrystalline with small grains due to high nucleation density on substrates. Here we report the successful synthesis of large single-crystal h-BN grains on rational designed Cu-Ni alloy foils. It is found that the nucleation density can be greatly reduced to 60 per mm2 by optimizing Ni ratio in substrates. The strategy enables the growth of single-crystal h-BN grains up to 7,500 um2, about 2 orders larger than that in previous reports. This work not only provides valuable information for understanding h-BN nucleation and growth mechanisms, but also gives an effective alternative to exfoliated h-BN as a high-quality dielectric layer for large-scale nano-electronic applications.

arXiv comment14 pages, 5 figures

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• Structural and electronic properties of epitaxial multilayer h-BN on Ni(111) for spintronics applications
• Symmorphic intersecting nodal rings in semiconducting layers
• Ab-initio calculations of carbon and boron nitride allotropes and their structural phase transitions using periodic coupled cluster theory
• Grain Boundaries in Chemical Vapor Deposited Atomically Thin Hexagonal Boron Nitride
• Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride
• Unidirectional domain growth of hexagonal boron nitride thin films
• Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
• Ni Foam Assisted Synthesis of High Quality Hexagonal Boron Nitride with Large Domain Size and Controllable Thickness
• Evolution of ordered nanoporous phases during h-BN growth: Controlling the route from gas-phase precursor to 2D material by $\text{in-situ}$ monitoring
• Towards the growth of single-crystal boron nitride monolayer on Cu