301 citations · 838 across the 25 of their papers we have counts for
27 papers
Gate-tunable large second-order and third-order nonlinear Hall effect in topological insulator BiSbTeSe2
Fengyi Guo, Shuai Zhang, Xiubing Li +7
The nonlinear Hall effect (NLHE) holds significant promise for next-generation electronic device applications, and it is essential to explore and engineer a strong and highly tunab…
Probing the anomalous symmetry-breaking in kagome material CsV3Sb5 via third-order nonlinearity
Zheng Dai, Fengyi Guo, Shuai Zhang +7
The kagome material has rapidly established itself as a research frontier in condensed matter physics, owing to its distinctive geometric structure and the rich array of unconventi…
Reconfigurable ultrafast perovskite polariton logic gates via nonlinear dynamics
Yuyang Zhang, Zhuoya Zhu, Xin Zeng +14
Exciton-polaritons provide a great platform for developing ultrafast all-optical logic gates for quantum and optical chips. However, progress toward practical polariton logic remai…
Higher odd-order nonlinear Hall effect in magnetic topological insulator Mn(Bi1-xSbx)2Te4
Xiubing Li, Zheng Dai, Shuai Zhang +10
The nonlinear Hall effect is a new member of the Hall effect family, which attracts intense research interests, and it is closely related to the quantum geometry of quantum materia…
Room-temperature third-order nonlinear anomalous Hall effect in ferromagnetic metal Fe3GaTe2
Zheng Dai, Shuai Zhang, Jiajun Li +9
Berry curvature, as the imaginary component of quantum geometry, plays a crucial role in condensed matter physics. The spatial distribution of Berry curvature can be characterized…
A Sc2C2@C88 cluster based ultra-compact multi-level probabilistic bit for matrix multiplication
Haoran Qi, Guohao Xi, Yuan-Biao Zhou +19
Information units are progressively approaching the fundamental physical limits of the integration density, including in terms of extremely small sizes, multistates and probabilist…
Light-induced giant enhancement of nonreciprocal transport at KTaO3-based interfaces
Xu Zhang, Tongshuai Zhu, Shuai Zhang +17
Nonlinear transport is a unique functionality of noncentrosymmetric systems, which reflects profound physics, such as spin-orbit interaction, superconductivity and band geometry. H…
Observation of giant nonreciprocal charge transport from quantum Hall states in a topological insulator
Chunfeng Li, Rui Wang, Shuai Zhang +10
Symmetry breaking in quantum materials is of great importance and can lead to nonreciprocal charge transport. Topological insulators provide a unique platform to study nonreciproca…
Large Exchange Bias Effect and Coverage-Dependent Interfacial Coupling in CrI3/MnBi2Te4 van der Waals Heterostructures
Zhe Ying, Bo Chen, Chunfeng Li +10
Igniting interface magnetic ordering of magnetic topological insulators by building a van der Waals heterostructure can help to reveal novel quantum states and design functional de…
Charge Carrier Mediation and Ferromagnetism induced in MnBi6Te10 Magnetic Topological Insulators by antimony doping
Hangkai Xie, Fucong Fei, Fenzhen Fang +11
A new kind of intrinsic magnetic topological insulators (MTI) MnBi2Te4 family have shed light on the observation of novel topological quantum effect such as quantum anomalous Hall…
Experimental evidence on the dissipationless transport of chiral edge state of the high-field Chern insulator in MnBi2Te4 nanodevices
Zhe Ying, Shuai Zhang, Bo Chen +6
We demonstrate the dissipationless transport of the chiral edge state (CES) in the nanodevices of quantum anomalous Hall insulator candidate MnBi2Te4. The device presents a near-ze…
Reversible Engineering of Topological Insulator Surface State Conductivity through Optical Excitation
Faji Xie, Zhen Lian, Shuai Zhang +13
Despite the broadband response, limited optical absorption at a particular wavelength hinders the development of optoelectronics based on Dirac fermions. Heterostructures of graphe…
Non-abelian gauge fields in circuit systems
Jiexiong Wu, Zhu Wang, Yuanchuan Biao +8
Circuits can provide a platform to study novel physics and have been used, for example, to explore various topological phases. Gauge fields-particularly, non-Abelian gauge fields-c…
A Gd@C82-based single molecular electret device with switchable electrical polarization
Kangkang Zhang, Cong Wang, Minhao Zhang +21
Single molecular electrets exhibiting single molecule electric polarization switching have been long desired as a platform for extremely small non-volatile storage devices, althoug…
Magneto-transport and Shubnikov-de Haas oscillations in the layered ternary telluride Ta3SiTe6 topological semimetal
Muhammad Naveed, Fucong Fei, Haijun Bu +10
Topological semimetals characterize a novel class of quantum materials hosting Dirac/Weyl fermions. The important features of topological fermions can be exhibited by quantum oscil…
Experimental observation of the gate-controlled reversal of the anomalous Hall effect in the intrinsic magnetic topological insulator MnBi2Te4 device
Shuai Zhang, Rui Wang, Xuepeng Wang +17
Here we report the reserved anomalous Hall effect (AHE) in the 5-septuple-layer van der Waals device of the intrinsic magnetic topological insulator MnBi2Te4. By employing the top/…
Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes
Bo Chen, Fucong Fei, Dongqin Zhang +23
Magnetic topological insulators (MTIs) offer a combination of topologically nontrivial characteristics and magnetic order and show promise in terms of potentially interesting physi…
Non-topological Origin of the Planar Hall Effect in Type-II Dirac Semimetal NiTe2
Qianqian Liu, Bo Chen, Boyuan Wei +7
Dirac and Weyl semimetals are new discovered topological nontrivial materials with the linear band dispersions around the Dirac/Weyl points. When applying non-orthogonal electric c…
Phase transition and anomalous scaling in the quantum Hall transport of topological insulator Sn-Bi1.1Sb0.9Te2S devices
Faji Xie, Shuai Zhang, Qianqian Liu +12
The scaling physics of quantum Hall transport in optimized topological insulators with a plateau precision of ~1/1000 e2/h is considered. Two exponential scaling regimes are observ…
Topological Phase Transition-Induced Tri-Axial Vector Magnetoresistance in (Bi1-xInx)2Se3 Nanodevices
Minhao Zhang, Huaiqiang Wang, Kejun Mu +18
We report the study of a tri-axial vector magnetoresistance (MR) in nonmagnetic (Bi1-xInx)2Se3 nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negati…
Diagnosing the magnetic field-tuned symmetry nature of the topological electrons by conductance fluctuations in bulk-insulating BiSbTeSe2 devices
Shuai Zhang, Faji Xie, Xing-Chen Pan +5
We extract the quantum conductance fluctuations and study its magnetic field dependence in the gate-dependent transport of the topological electrons in bulk-insulating BiSbTeSe2 de…
Universal Conductance Fluctuations of Topological Insulators
Shuai Zhang, Zhaoguo Li, Fengqi Song
As an exotic quantum condensed matter, the topological insulator (TI) is a bulk-insulating material with a Dirac-type conducting surface state. Such dissipationless transport of to…
Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe
Haiyang Pan, Bingbing Tong, Jihai Yu +8
The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of…
Stepwise quantized surface states and delayed Landau level hybridization in Co cluster-decorated BiSbTeSe2 topological insulator devices
Shuai Zhang, Li Pi, Rui Wang +16
In three-dimensional topological insulators (TIs), the nontrivial topology in their electronic bands casts a gapless state on their solid surfaces, using which dissipationless TI e…