Twist-resilient and robust ferroelectric quantum spin Hall insulators driven by van der Waals interactions
arXiv:2112.07695 · doi:10.1038/s41699-022-00305-9
Abstract
Quantum spin Hall insulators (QSHI) have been proposed to power a number of applications, many of which rely on the possibility to switch on and off the non-trivial topology. Typically this control is achieved through strain or external electric fields, which require energy consumption to be maintained. On the contrary, a non-volatile mechanism would be highly beneficial and could be realized through ferroelectricity if opposite polarization states are associated with different topological phases. While this is not possible in a single ferroelectric material where the two polarization states are related by inversion, the necessary asymmetry could be introduced by combining a ferroelectric layer with another two-dimensional (2D) trivial insulator. Here, by means of first-principles simulations, not only we propose that this is a promising strategy to engineer non-volatile ferroelectric control of topological order in 2D heterostructures, but also that the effect is robust and can survive up to room temperature, irrespective of the weak van der Waals coupling between the layers. We illustrate the general idea by considering a heterostructure made of a well-known ferroelectric material, InSe, and a suitably chosen, easily exfoliable trivial insulator, CuI. In one polarization state the system is trivial, while it becomes a QSHI with a robust band gap upon polarization reversal. Remarkably, the topological band gap is mediated by the interlayer hybridization and allows to maximise the effect of intralayer spin-orbit coupling, promoting a robust ferroelectric topological phase that could not exist in monolayer materials and is resilient against relative orientation and lattice matching between the layers.
13 pages, 8 figures + supplementary (6 pages, 3 figures)
References in corpus (16)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Advanced capabilities for materials modelling with Quantum ESPRESSO
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Topological Crystalline Insulators
- Quantum Spin Hall Effect and Topological Field Effect Transistor in Two-Dimensional Transition Metal Dichalcogenides
- Out-of-plane Piezoelectricity and Ferroelectricity in Layered -In2Se3 Nano-flakes
- Computing topological invariants without inversion symmetry
- Recent Progress of the Computational 2D Materials Database (C2DB)
- Many-body perturbation theory calculations using the yambo code
- Electric Field Induced Topological Phase Transition in Two-Dimensional Few-layer Black Phosphorus
- Z2Pack: Numerical Implementation of Hybrid Wannier Centers for Identifying Topological Materials
- High-throughput calculations of magnetic topological materials
- Towards Exotic Layered Materials: 2D Cuprous Iodide
- Nonvolatile ferroelectric control of topological states in 2D heterostructures
- On-demand quantum spin Hall insulators controlled by two-dimensional ferroelectricity
Cited by in corpus (6)
- Ferroelectricity-tuned band topology and superconductivity in two-dimensional materials and related heterostructures
- Ferroelectric higher-order topological insulator in two dimensions
- Machine-learning accelerated identification of exfoliable two-dimensional materials
- Ferroelectric valley valves with graphene/MoTe van der Waals heterostructures
- Movable Dirac Points with Ferroelectrics: Kink States and Berry Curvature Dipoles
- Ferroelectric switching of quantum anomalous Hall effects in MnBi2Te4 films