Bending Strain Engineering of Spin Transport in Quantum Spin Hall Systems: Topological Nano-mechanospintronics
arXiv:1611.09929 · doi:10.1038/ncomms15850
Abstract
Quantum spin Hall (QSH) system can exhibit exotic spin transport phenomena, mediated by its topological edge states. Here a novel concept of bending strain engineering to tune the spin transport properties of a QSH system is demonstrated by both model and first-principles calculations. Interestingly, we discover that bending strain can be used to mitigate the spin conservation of a QSH system to generate a non-zero spin current (SC), meanwhile the preservation of time reversal symmetry renders its edge states topologically protected to transport robust SC without back scattering. This novel physics mechanism can be applied to effectively tune the SC and spin Hall current in a QSH system by control of its bending curvature. Furthermore, the realization of QSH systems with controllable curvature can be achieved by the concept of "topological nanomechnical architecture". Taking Bi/Cl/Si(111) as a material example, we demonstrate that the relative spin orientations between two edge states of a Bi/Cl/Si(111) film can indeed be tuned dramatically by its self-bending behaviors induced by the pre-designed inherent strain. Therefore, this concept of "bending strain engineering of spins" via topological nanomechanical architecture affords a promising route towards the realization of topological nano-mechanospintronics.
arXiv comment5 figures
References in corpus (19)
- Quantum Spin Hall Effect in Graphene
- Topological Order and the Quantum Spin Hall Effect
- Half-Metallic Graphene Nanoribbons
- Quantum Spin Hall Effect
- Universal Intrinsic Spin-Hall Effect
- Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
- Dissipationless Quantum Spin Current at Room Temperature
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- Gauge fields in graphene
- Quantum Spin Hall Effect and Topologically Invariant Chern Numbers
- Strain engineering in semiconducting two-dimensional crystals
- Observation of Quantum Spin Hall States in InAs/GaSb Bilayers under Broken Time-Reversal Symmetry
- Novel effects of strains in graphene and other two dimensional materials
- Generating quantizing pseudomagnetic fields by bending graphene ribbons
- Flat Chern Band in a Two-Dimensional Organometallic Framework
- Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface
- The -orbital counterpart of graphene: cold atoms in the honeycomb optical lattice
- Conductivity of a generic helical liquid
- Spin-Seebeck effect on the surface of topological insulator due to nonequilibrium spin-polarization parallel to the direction of thermally driven electronic transport
Cited by in corpus (8)
- Spin-polarization control driven by a Rashba-type effect breaking the mirror symmetry in two-dimensional dual topological insulators
- Magnetic nanotubes: A new material platform to realize robust spin-Seebeck effect and perfect thermal spin-filtering effect
- Layertronic control of topological states in multilayer metal-organic frameworks
- Twist-resilient and robust ferroelectric quantum spin Hall insulators driven by van der Waals interactions
- A Unified Theory and Fundamental Rules of Strain-dependent Doping Behaviors in Semiconductors
- Twist-induced magnon Landau levels in honeycomb magnets
- Tuning topology in thin films of topological insulators by strain gradients
- Quantum mechanics of fermion confined to a curved surface in Foldy-Wouthuysen representation