Ferroelectric higher-order topological insulator in two dimensions

Abstract

The interplay between ferroelectricity and band topology can give rise to a wide range of both fundamental and applied research. Here, we map out the emergence of nontrivial corner states in two-dimensional ferroelectrics, and remarkably demonstrate that ferroelectricity and corner states are coupled together by crystallographic symmetry to realize the electric control of higher-order topology. Implemented by density functional theory, we identify a series of experimentally synthesized two-dimensional ferroelectrics, such as In${}_2$Se${}_3$, BN bilayers, and SnS, as realistic material candidates for the proposed ferroelectric higher-order topological insulators. Our work not only sheds new light on traditional ferroelectric materials but also opens an avenue to bridge the higher-order topology and ferroelectricity that provides a nonvolatile handle to manipulate the topology in next-generation electronic devices.

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• Higher-order topological phases in crystalline and non-crystalline systems: a review
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• High-Order Topological Phase Diagram Revealed by Anomalous Nernst Effect in Janus ScClI Monolayer
• Ferroelectric polarization controlled orbital Hall conductivity in a higher-order topological insulator: \textit{d1T}-phase monolayer MoS${}_2$
• Second-order topological insulator in Bilayer borophene
• Ferroelectrically Controlled Chirality Switching of Weyl Quasiparticles