Electric field controlled spin- and valley-polarized edge states in silicene with extrinsic Rashba effect

Abstract

In the presence of extrinsic Rashba spin-orbit coupling, we find that silicene can host a new quantum anomalous Hall state with spin- and valley-polarized edge states, which can be effectively controlled by the exchange field and electric field. In this new state, the pair of nontrivial edge states reside in one specific valley and have a strong but opposite spin polarization. A distinctive feature of this new state is that both of the spin and valley index of the edge states can be switched by reversing the electric field. We also present a microscopic mechanism for the origination of the new state. Our findings provide an efficient way to control the topologically protected spin- and valley-polarized edge states, which is crucial for spintronics and valleytronics.

5 pages, 5 figures

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Cited by in corpus (10)

• Topological and magnetic phase transition in silicene-like zigzag nanoribbons
• Magnetic field induced Valley-Polarized Quantum Anomalous Hall Effects in Ferromagnetic van der Waals Heterostructures
• Pure spin current and perfect valley filter by designed separation of the chiral states in two-dimensional honeycomb lattices
• Spin-valley polarized edge states and quantum anomalous Hall states controlled by side potential in 2D honeycomb lattices
• Role of line defect in the bandgap and transport properties of silicene nanoribbons
• Stacking-configuration-enriched essential properties in bilayer silicenes
• Far-field heat and angular momentum radiation of the Haldane model
• Spin splitting and spin Hall conductivity in buckled monolayers of the group 14: First-principles calculations
• Trigonal warping induced terraced spin texture and nearly perfect spin polarization in graphene with Rashba effect
• Electric field controlled valley-polarized photocurrent switch based on the circular bulk photovoltaic effect