activity
20022024
most citedSpectroscopic signatures of spin-charge separation in the quasi-one-dimensional organic conductor TTF-TCNQ

172 citations · 2.1k across the 58 of their papers we have counts for

collaborators

59 papers

cond-mat.mes-hall2024

Keldysh Theory of Thermal Transport in Multiband Hamiltonians

Luqman Saleem, Udo Schwingenschlogl, Aurelien Manchon

We establish a comprehensive theoretical framework for systems subjected to a static uniform temperature gradient, employing the non-equilibrium Keldysh-Dyson formalism. This frame…

cond-mat.mes-hall2024

Fluctuation-mediated spin-orbit torque enhancement in the noncollinear antiferromagnet Mn3Ni0.35Cu0.65N

Arnab Bose, Tom G. Saunderson, Aga Shahee +9

The role of spin fluctuations near magnetic phase transitions is crucial for generating various exotic phenomena, including anomalies in the extraordinary Hall effect, excess spin-…

cond-mat.mes-hall2023★ 5 cited

Higher-order Hall response arises from octupole order and scalar spin chirality in a noncollinear antiferromagnet

Adithya Rajan, Tom G. Saunderson, Fabian R. Lux +19

Noncollinear antiferromagnets can generate a transverse electrical response known as the anomalous Hall effect, even though they possess almost no net magnetization. The microscopi…

cond-mat.mtrl-sci2022★ 7 cited

Phase engineering in tantalum sulfide monolayers on Au(111)

Daniela Dombrowski, Abdus Samad, Kai Mehlich +3

We prepare monolayers of tantalum sulfide on Au(111) by evaporation of Ta in a reactive background of HS. Under sulfur-rich conditions, monolayers of 2H-TaS develop, wherea…

cond-mat.mtrl-sci2022★ 29 cited

Lattice Instability and Ultralow Lattice Thermal Conductivity of Layered PbIF

N. Yedukondalu, Aamir Shafique, S. C. Rakesh Roshan +5

Understanding the interplay between various design strategies (for instance, bonding heterogeneity and lone pair induced anharmonicity) to achieve ultralow lattice thermal conducti…

physics.chem-ph2022

Solution-processed van der Waals heterojunction as the damage-free gate contact for high performance GaN HEMTs

Chuanju Wang, Xiangming Xu, Mohamed Nejib Hedhili +2

The junctions formed between gate contact and III-nitride are crucial components of GaN-based electronics and optoelectronics. In this work, solution-processed inorganic Ti3C2Tx MX…