Radiation Hardness of Graphene and MoS2 Field Effect Devices Against Swift Heavy Ion Irradiation

Abstract

We have investigated the deterioration of field effect transistors based on twodimensional materials due to irradiation with swift heavy ions. Devices were prepared with exfoliated single layers of MoS2 and graphene, respectively. They were characterized before and after irradiation with 1.14 GeV U228+2 ions using three different fluences. By electrical characterization, atomic force microscopy and Raman spectroscopy we show that the irradiation leads to significant changes of structural and electrical properties. At the highest fluence of 4 x 102^11 ions/cm^2, the MoS2 transistor is destroyed, while the graphene based device remains operational, albeit with an inferior performance.

References in corpus (8)

• The Raman Fingerprint of Graphene
• Ultrahigh electron mobility in suspended graphene
• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
• Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures
• An accurate measurement of electron beam induced displacement cross sections for single-layer graphene
• Ion irradiation tolerance of graphene as studied by atomistic simulations
• Manipulation of the graphene surface potential by ion irradiation

Cited by in corpus (4)

• Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
• Electron irradiation of metal contacts in monolayer MoS${}_2$ Field-Effect Transistors
• Double-resonant LA phonon scattering in defective graphene and carbon nanotubes
• Layer compression and enhanced optical properties of few-layer graphene nanosheets induced by ion irradiation