Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n $\leftrightarrow$ p transition in graphene

Ramesh G. Mani

doi:10.1063/1.4940363

paper

Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n $\leftrightarrow$ p transition in graphene

arXiv:1602.04013 · doi:10.1063/1.4940363

Abstract

The Hall effect, and the diagonal resistance, which indicates a residual resistivity $ρ_{xx} \approx h /4 e^{2}$ , are experimentally examined over the p $\leftrightarrow$ n transition about the nominal neutrality point in chemical vapor deposition (CVD) grown graphene. A distribution of neutrality potentials is invoked in conjunction with multi-carrier conduction to model the experimental observations. From the modeling, we extract the effective residual electron- and hole- densities around the nominal neutrality point. The results indicate mixed transport due to co-existing electrons and holes in large area zero-band gap CVD graphene devices, which indicates domain confined ambipolar currents broadly over the gate-induced n $\leftrightarrow$ p transition.

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Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n ↔ p transition in graphene

Abstract

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Method for determining the residual electron- and hole- densities about the neutrality point over the gate-controlled n $\leftrightarrow$ p transition in graphene