Giant inelastic tunneling in epitaxial graphene mediated by localized states
arXiv:1004.3179 · doi:10.1103/PhysRevB.81.205403
Abstract
Local electronic structures of nanometer-sized patches of epitaxial graphene and its interface layer with SiC(0001) have been studied by atomically resolved scanning tunneling microscopy and spectroscopy. Localized states belonging to the interface layer of a graphene/SiC system show to have an essential influence on the electronic structure of graphene. Giant enhancement of inelastic tunneling, reaching 50% of the total tunneling current, has been observed at the localized states on a nanometer-sized graphene monolayer surrounded by defects.
6 pages, 5 figures, accepted for publication in Phys. Rev. B
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- Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer
- Observation of Giant Quantized Phonon Modes in Graphene via Tunneling Spectra
- Probing crystallinity of graphene samples via the vibrational density of states
- Impurity assisted nanoscale localization of plasmonic excitations in graphene
- Substrate dopant induced electronic inhomogeneity in epitaxial bilayer graphene