Properties of Two-Dimensional Silicon grown on Graphene Substrate
arXiv:1304.1792 · doi:10.1063/1.4820473
Abstract
The structure and electrical properties of a two-dimensional (2D) sheet of silicon on a graphene substrate are studied using first-principles calculations. A new corrugated rectangular structure of silicon is proposed to be the most energetically favorable structure. The shifting of the Fermi energy level indicates self-doping. Calculation of electron density shows a weak coupling between the silicon layer and graphene substrate. The 2D silicon sheet turns to be metallic and has a much higher value of transmission efficiency (TE) than the underlying graphene substrate.
5 Pages, 7 figures