Conduction properties of extended defect states in Dirac materials
arXiv:1907.12604 · doi:10.1140/epjp/s13360-020-00491-9
Abstract
We demonstrate the existence of localized states in close vicinity of a linear defect in graphene. These states have insulating or conducting character. Insulating states form a flat band, while conducting states present a slowdown of the group velocity which is not originated by many-body interactions and it is controlled by the interface properties. For appropriate boundary conditions, the conducting states exhibit momentum-valley locking and protection from backscattering effects. These findings provide a contribution to the recent discussion on the origin of correlated phases in graphene.
arXiv comment4 pages, 1 figure
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