Metamaterial inspired perfect tunneling in semiconductor heterostructures

Abstract

In this paper we are using formal analogy of electromagnetic wave equation and Schrodinger equation in order to study the phenomenon of perfect tunneling (tunneling with unitary transmittance) in 1D semiconductor heterostructure. Using the Kane model of semiconductor we are showing that such phenomenon can indeed exist, resembling all the interesting features of the analogous phenomenon in classical electromagnetism in which metamaterials (substances with negative material parameters) are involved. We believe that these results can open up the way to interesting applications in which the metamaterial ideas are transfered into semiconductor domain.

References in corpus (2)

• Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
• Metamaterials for Ballistic Electrons

Cited by in corpus (6)

• Effective Hamiltonian for electron waves in artificial graphene: A first principles derivation
• A Metamaterial-Inspired Model for Electron Waves in Bulk Semiconductors
• Embedded Energy State in an Open Semiconductor Heterostructure
• Giant nonlinearity in Zero-Gap Semiconductor Superlattices
• Electromagnetic tunneling of obliquely-incident waves through a single-negative slab paired with a double-positive uniaxial slab
• A Perfect Lens for Ballistic Electrons: A Kane's Model