2 papers
cond-mat.mes-hall2023
Gas dependent hysteresis in MoS field effect transistors
F. Urban, F. Giubileo, A. Grillo +10
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…
physics.app-ph2019
Patterning of diamond with 10 nm resolution by electron-beam-induced etching
Vasilis Dergianlis, Martin Geller, Dennis Oing +2
We report on mask-less, high resolution etching of diamond surfaces, featuring sizes down to 10 nm. We use a scanning electron microscope (SEM) together with water vapor, which was…