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A WSe2 vertical field emission transistor
Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando +6
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrat…
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban +8
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized…
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…