607 citations · 2.8k across the 31 of their papers we have counts for
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cond-mat.mes-hall2023★ 106 cited
Gas dependent hysteresis in MoS field effect transistors
F. Urban, F. Giubileo, A. Grillo +10
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistor…
physics.app-ph2023
Manipulation of the electrical and memory properties of MoS field-effect transistors by highly charged ion irradiation
Stephan Sleziona, Aniello Pelella, Enver Faella +6
Field-effect transistors based on molybdenum disulfide (MoS) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hy…