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A current-voltage model for double Schottky barrier devices
Alessandro Grillo, Antonio Di Bartolomeo
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been play…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…