306 citations · 1.3k across the 13 of their papers we have counts for
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Memory effects in black phosphorus field effect transistors
Alessandro Grillo, Aniello Pelella, Enver Faella +5
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer char…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Field Emission Characterization of MoS2 Nanoflowers
Filippo Giubileo, Alessandro Grillo, Maurizio Passacantando +7
Nanostructured materials have wide potential applicability as field emitters due to their high aspect ratio. We hydrothermally synthesized MoS2 nanoflowers on copper foil and chara…
Pressure-Tunable Ambipolar Conduction and Hysteresis in Ultrathin Palladium Diselenide Field Effect Transistors
Antonio Di Bartolomeo, Aniello Pelella, Xiaowei Liu +7
A few-layer palladium diselenide (PdSe2) field effect transistor is studied under external stimuli such as electrical and optical fields, electron irradiation and gas pressure. We…
Environmental effects on the electrical characteristics of back-gated WSe2 field effect transistors
Francesca Urban, Lisanne Peters, Nadia Martucciello +2
We study the effect of polymer coating, pressure and temperature on the electrical characteristics of monolayer WSe2 back-gated transistors with quasi-ohmic Ni/Au contacts. We find…
A WSe2 vertical field emission transistor
Antonio Di Bartolomeo, Francesca Urban, Maurizio Passacantando +6
We report the first observation of gate-controlled field emission current from a tungsten diselenide (WSe2) monolayer, synthesized by chemical-vapour deposition on SiO2/Si substrat…
Asymmetric Schottky Contacts in Bilayer MoS2 Field Effect Transistors
Antonio Di Bartolomeo, Alessandro Grillo, Francesca Urban +8
We discuss the high-bias electrical characteristics of back-gated field-effect transistors with CVD-synthesized bilayer MoS2 channel and Ti Schottky contacts. We find that oxidized…
Hysteresis in the transfer characteristics of MoS2 transistors
Antonio Di Bartolomeo, Luca Genovese, Filippo Giubileo +4
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS2 channel. We find that the hyster…