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20172021
most citedHysteresis in the transfer characteristics of MoS2 transistors

306 citations · 475 across the 4 of their papers we have counts for

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5 papers · 1 filter

physics.app-ph2020

Isotropic conduction and negative photoconduction in ultrathin PtSe films

Francesca Urban, Farzan Gity, Paul K. Hurley +2

PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…

physics.app-ph2020

Field emission from two-dimensional GeAs

Antonio Di Bartolomeo, Alessandro Grillo, Filippo Giubileo +4

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated mul…

physics.app-ph2020

Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors

A. Pelella, O. Kharsah, A. Grillo +9

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…

physics.app-ph2020

Electron irradiation on multilayer PdSe field effect transistors

A. Di Bartolomeo, F. Urban, A. Pelella +4

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…

physics.app-ph2018

Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors

Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6

Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…