activity
20172021
most citedHysteresis in the transfer characteristics of MoS2 transistors

306 citations · 1.3k across the 13 of their papers we have counts for

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Showing 2020Show all

5 papers · 1 filter

physics.app-ph2020★ 32 cited

Isotropic conduction and negative photoconduction in ultrathin PtSe films

Francesca Urban, Farzan Gity, Paul K. Hurley +2

PtSe ultrathin films are used as the channel of back-gated field-effect transistors (FETs) that are investigated at different temperatures and under super-continuous white lase…

physics.app-ph2020★ 26 cited

Field emission from two-dimensional GeAs

Antonio Di Bartolomeo, Alessandro Grillo, Filippo Giubileo +4

GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated mul…

cond-mat.mes-hall2020

Field emission characteristics of InSb patterned nanowires

Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6

InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…

physics.app-ph2020★ 69 cited

Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors

A. Pelella, O. Kharsah, A. Grillo +9

This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…

physics.app-ph2020★ 44 cited

Electron irradiation on multilayer PdSe field effect transistors

A. Di Bartolomeo, F. Urban, A. Pelella +4

Palladium diselenide (PdSe2) is a recently isolated layered material that has attracted a lot of interest for the pentagonal structure, the air stability and the electrical propert…