106 citations · 277 across the 7 of their papers we have counts for
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A current-voltage model for double Schottky barrier devices
Alessandro Grillo, Antonio Di Bartolomeo
Schottky barriers are often formed at the semiconductor/metal contacts and affect the electrical behaviour of semiconductor devices. In particular, Schottky barriers have been play…
Gate-controlled field emission current from MoS nanosheets
Aniello Pelella, Alessandro Grillo, Francesca Urban +6
Monolayer molybdenum disulfide (MoS) nanosheets, obtained via chemical vapor deposition onto SiO/Si substrates, are exploited to fabricate field-effect transistors with n-t…
Field emission from two-dimensional GeAs
Antonio Di Bartolomeo, Alessandro Grillo, Filippo Giubileo +4
GeAs is a layered material of the IV-V groups that is attracting growing attention for possible applications in electronic and optoelectronic devices. In this study, exfoliated mul…
Vacuum gauge from ultrathin MoS2 transistor
A. Di Bartolomeo, A. Pelella, A. Grillo +5
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the…
Field emission characteristics of InSb patterned nanowires
Filippo Giubileo, Maurizio Passacantando, Francesca Urban +6
InSb nanowire arrays with different geometrical parameters, diameter and pitch, are fabricated by top-down etching process on Si(100) substrates. Field emission properties of InSb…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…