Dielectrophoretic Assembly of High-Density Arrays of Individual Graphene Devices for Rapid Screening
arXiv:0906.1013 · doi:10.1021/nn900288d
Abstract
We establish the use of dielectrophoresis for the directed parallel assembly of individual flakes and nanoribbons of few-layer graphene into electronic devices. This is a bottom-up approach where source and drain electrodes are prefabricated and the flakes are deposited from a solution using an alternating electric field applied between the electrodes. These devices are characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and electron transport measurements. They are shown to be electrically active and their current carrying capacity and subsequent failure mechanism is revealed. Akin to carbon nanotubes, we show that the dielectrophoretic deposition is self-limiting to one flake per device and is scalable to ultra-large-scale integration densities, thereby enabling the rapid screening of a large number of devices.
ACS Nano, (2009) In Press
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Cited by in corpus (7)
- Graphene Photonics and Optoelectronics
- High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis
- Probing top-gated field effect transistor of reduced graphene oxide monolayer made by dielectrophoresis
- Graphene-enabled, directed nanomaterial placement from solution for large-scale device integration
- Electrical Transport Properties of Graphene Nanoribbons Produced from Sonicating Graphite in Solution
- Controlled fabrication of single-walled carbon nanotube electrodes by electron-beam-induced oxidation
- Probing hotspots of plasmon-enhanced Raman scattering by nanomanipulation of carbon nanotubes