Chiral Symmetry Breaking and the Quantum Hall Effect in Monolayer Graphene

Bitan Roy; Malcolm P. Kennett; S. Das Sarma

doi:10.1103/PhysRevB.90.201409

paper

Chiral Symmetry Breaking and the Quantum Hall Effect in Monolayer Graphene

arXiv:1406.5184 · doi:10.1103/PhysRevB.90.201409

Abstract

Monolayer graphene in a strong magnetic field exhibits quantum Hall states at filling fractions $ν = 0$ and $ν = \pm 1$ that are not explained within a picture of noninteracting electrons. We propose that these states arise from interaction-induced chiral symmetry-breaking orders. We argue that when the chemical potential is at the Dirac point, weak on-site repulsion supports an easy-plane antiferromagnet state, which simultaneously gives rise to ferromagnetism oriented parallel to the magnetic field direction, whereas for $∣ ν ∣ = 1$ easy-axis antiferromagnet and charge-density-wave orders coexist. We perform self-consistent calculations of the magnetic field dependence of the activation gap for the $ν = 0$ and $∣ ν ∣ = 1$ states and obtain excellent agreement with recent experimental results. Implications of our study for fractional Hall states in monolayer graphene are highlighted.

5 pages, 3 figures + Supplementary Materials (3.5 pages, 2 figures): Published version, typos corrected, new references

Chiral Symmetry Breaking and the Quantum Hall Effect in Monolayer Graphene

Abstract

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