Multicomponent fractional quantum Hall states with subband and spin degrees of freedom
arXiv:1501.06958 · doi:10.1103/PhysRevB.92.201101
Abstract
In wide GaAs quantum wells where two electric subbands are occupied we apply a parallel magnetic field or increase the electron density to cause a crossing of the two Landau levels of these subbands and with opposite spins. Near the crossing, the fractional quantum Hall states in the filling factor range exhibit a remarkable sequence of pseudospin polarization transitions resulting from the interplay between the spin and subband degrees of freedom. The field positions of the transitions yield a new and quantitative measure of the composite Fermions' discrete energy level separations. Surprisingly, the separations are smaller when the electrons have higher spin-polarization.
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- Morphing of 2D Hole Systems at in Parallel Magnetic Fields: Compressible, Stripe, and Fractional Quantum Hall Phases
- Unlocking new regimes in fractional quantum Hall effect with quaternions
- Search for Composite Fermions at Filling Factor 5/2: Role of Landau Level and Subband Index
- Re-Symmetrizing the Broken Symmetry with Isotropic Hydrostatic Pressure
- Pseudospin Polarization of Composite Fermions under Uniaxial Strain
- Electronic band structure in -type GaAs/AlGaAs wide quantum wells in tilted magnetic field