Unconventional Hall effect near charge neutrality point in a two-dimensional electron-hole system

Abstract

The transport properties of the two-dimensional system in HgTe-based quantum wells containing simultaneously electrons and holes of low densities are examined. The Hall resistance, as a function of perpendicular magnetic field, reveals an unconventional behavior, different from the classical N-shaped dependence typical for bipolar systems with electron-hole asymmetry. The quantum features of magnetotransport are explained by means of numerical calculation of the Landau level spectrum based on the Kane Hamiltonian. The origin of the quantum Hall plateau σxy = 0 near the charge neutrality point is attributed to special features of Landau quantization in our system.

8 pages, 7 figures

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• Thermopower of a Two-Dimensional Semimetal in a HgTe Quantum Well
• Multiple crossing of Landau levels of two-dimensional fermions in double HgTe quantum wells
• Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers
• Double valley Dirac fermions for 3D and 2D Hg${}_{1-x}$Cd${}_x$Te with strong asymmetry
• Spin mixing between subbands and extraordinary Landau levels shift in wide HgTe quantum wells