activity
20072018
most citedStacking-order dependent transport properties of trilayer graphene

113 citations · 196 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2018

Laser writable high-K dielectric for van der Waals nano-electronics

N. Peimyoo, M. D. Barnes, J. D. Mehew +9

Like silicon-based semiconductor devices, van der Waals heterostructures will require integration with high-K oxides. This is needed to achieve suitable voltage scaling, improved p…

cond-mat.mes-hall2015★ 1 cited

High Efficiency CVD Graphene-lead (Pb) Cooper Pair Splitter

I. V. Borzenets, Y. Shimazaki, G. F. Jones +4

We demonstrate high efficiency Cooper pair splitting in a graphene-based device. We utilize a true Y-shape design effectively placing the splitting channels closer together: graphe…

cond-mat.mes-hall2011★ 113 cited

Stacking-order dependent transport properties of trilayer graphene

S. H. Jhang, M. F. Craciun, S. Schmidmeier +8

We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular…

cond-mat.mes-hall2008★ 51 cited

Evanescent wave transport and shot noise in graphene: ballistic regime and effect of disorder

R. Danneau, F. Wu, M. F. Craciun +5

We have investigated electrical transport and shot noise in graphene field effect devices. In large width over length ratio graphene strips, we have measured shot noise at lo…

cond-mat.mtrl-sci2007★ 31 cited

Bias-dependent Contact Resistance in Rubrene Single-Crystal Field-Effect Transistors

A. Molinari, I. Gutierrez, I. N. Hulea +2

We report a systematic study of the bias-dependent contact resistance in rubrene single-crystal field-effect transistors with Ni, Co, Cu, Au, and Pt electrodes. We show that the re…