Field-effect-driven half-metallic multilayer graphene
arXiv:1802.09028 · doi:10.1103/PhysRevB.98.075418
Abstract
Rhombohedral stacked multilayer graphene displays the occurrence of a magnetic surface state at low temperatures. Recent angular resolved photoemission experiments demonstrate the robustness of the magnetic state in long sequences of ABC graphene. Here, by using first-principles calculations, we show that field-effect doping of these graphene multilayers induces a perfect half-metallic behaviour with 100% of spin current polarization already at dopings attainable in conventional field effect transistors with solid state dielectrics. Our work demonstrates the realisability of a new kind of spintronic devices where the transition between the low resistance and the high resistance state is driven only by electric fields.
References in corpus (24)
- Magic-angle graphene superlattices: a new platform for unconventional superconductivity
- Correlated Insulator Behaviour at Half-Filling in Magic Angle Graphene Superlattices
- Half-Metallic Graphene Nanoribbons
- Spin torque switching with the giant spin Hall effect of tantalum
- Half-metallic ferromagnets: From band structure to many-body effects
- Spin-orbit gap of graphene: First-principles calculations
- Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
- Will Zigzag Graphene Nanoribbon Turn to Half Metal under Electric Field?
- Giant enhancement of spin accumulation and long-distance spin precession in metallic lateral spin valves
- Ab-initio study of gap opening and screening effects in gated bilayer graphene
- Theory of spin-orbit coupling in bilayer graphene
- Half-metallic diluted antiferromagnetic semiconductors
- Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene
- Experimental approval of the extended flat bands and gapped subbands in rhombohedral multilayer graphene
- Magnetic gap opening in rhombohedral-stacked multilayer graphene from first principles
- Electrochemical doping of few layer ZrNCl from first-principles: electronic and structural properties in field-effect configuration
- Fermions on bilayer graphene: symmetry breaking for B=0 and nu=0
- Magneto-electric coupling in zigzag graphene nanoribbons
- The Raman fingerprint of rhombohedral graphite
- Stacking order, interaction and weak surface magnetism in layered graphene sheets
- Imaging Stacking Order in Few-Layer Graphene
- Half Metallic Bilayer Graphene
- Gap generation in ABC-stacked multilayer graphene: screening vs band flattening
- Dynamical polarization in ABC-stacked multilayer graphene in a magnetic field
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- Hybrid-functional electronic structure of multilayer graphene
- Gate Tunable Magnetism and Giant Magnetoresistance in ABC-stacked Few-Layer Graphene
- Electrical tuning of the magnetic properties of 2D magnets: the case of
- Gate-induced half-metals in Bernal stacked graphene multilayer
- Ordered states of undoped AB bilayer graphene: bias induced cascade of transitions