Half-metallic diluted antiferromagnetic semiconductors

Abstract

The possibility of half-metallic antiferromagnetism, a special case of ferrimagnetism with a compensated magnetization, in the diluted magnetic semiconductors is highlighted on the basis of the first principles electronic structure calculation. As typical examples, the electrical and magnetic properties of II-VI compound semiconductors doped with 3d transition metal ion pairs--(V, Co) and (Fe, Cr)--are discussed.

References in corpus (3)

• Molecular Beam Epitaxy of Wurtzite (Ga,Mn)N Films on Sapphire(0001) Showing the Ferromagnetic Behaviour at Room Temperature
• Spin Density Functional Based Search for Half-Metallic Antiferromagnets
• Curie Temperature Trends in (III,Mn)V Ferromagnetic Semiconductors

Cited by in corpus (14)

• Ab-initio design of half-metallic fully-compensated ferrimagnets: the case of Cr${}_2$MnZ (Z= P, As, Sb, Bi) compounds
• Exchange interactions and Curie temperatures in Mn2CoZ compounds
• Two-dimensional fully-compensated Ferrimagnetism
• Ferrimagnetism and disorder in epitaxial Mn(2-x)Co(x)VAl thin films
• Ab initio prediction of ferrimagnetism, exchange interactions and Curie temperatures in Mn2TiZ Heusler compounds
• Nonzero macroscopic magnetization in half-metallic antiferromagnets at finite temperatures
• Possible Half Metallic Antiferromagnetism in a Double Perovskite Material with Strong Spin-Orbit Couplings
• First-principles study of inter-site magnetic couplings and Curie temperature in RFe${}_{12-x}$Cr${}_x$ (R = Y, Nd, Sm)
• Half-metallic Antiferromagnet BaCrFeAs2
• Defects in CrAs and related compounds: a route to half-metallic ferrimagnetism
• Half Metal Transition Driven by Doping Effects in Osmium Double Perovskite
• Field-effect-driven half-metallic multilayer graphene
• Gate-induced half-metals in Bernal stacked graphene multilayer
• Electric-Field-induced Two-Dimensional Fully Compensated Ferrimagnetism and Emergent Transport Phenomena