Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization

Abstract

We theoretically study the efficiency limits and performance characteristics of few-layer graphene-semiconductor solar cells (FGSCs) based on a Schottky contact device structure. We model and compare the energy conversion efficiency of various configurations by explicitly considering the non-Richardson thermionic emission across few-layer graphene/semiconductor Schottky heterostructures. The calculations reveal that ABA-stacked trilayer graphene-silicon solar cell exhibits a maximal conversion efficiency exceeding 28\% due to a lower reversed saturation current when compared to that of the ABC-stacking configuration. The thermal coefficients of PCE for ABA and ABC stacking FGSCs are -0.064\%/K and -0.049\%/K, respectively. Our work offers insights for optimal designs of graphene-based solar cells, thus paving a route towards the design of high-performance FGSC for future nanoscale energy converters.

5 pages, 5 figures

References in corpus (7)

• The electronic properties of graphene
• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• High Efficiency Graphene Solar Cells by Chemical Doping
• Ideal Graphene/Silicon Schottky Junction Diodes
• Optical transmittance of multilayer graphene
• Electric transport and magnetic properties in multilayer graphene
• Current-temperature scaling for a Schottky interface with non-parabolic energy dispersion