Theory of thermionic emission from a two-dimensional conductor and its application to a graphene-semiconductor Schottky junction
arXiv:1802.09543 · doi:10.1063/1.5027271
Abstract
The standard theory of thermionic emission developed for three-dimensional semiconductors does not apply to two-dimensional materials even for making qualitative predictions because of the vanishing out-of-plane quasiparticle velocity. This study reveals the fundamental origin of the out-of-plane charge carrier motion in a two-dimensional conductor due to the finite quasiparticle lifetime and huge uncertainty of the out-of-plane momentum. The theory is applied to a Schottky junction between graphene and a bulk semiconductor to derive a thermionic constant, which, in contrast to the conventional Richardson constant, is determined by the Schottky barrier height and Fermi level in graphene.
4+ pages, 3 figs, 60 refs, a somewhat compressed version has been published in APL
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Cited by in corpus (9)
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- Generalized high-energy thermionic electron injection at graphene interface
- Theory of photoexcited and thermionic emission across a two-dimensional graphene-semiconductor Schottky junction
- Universal model for electron thermal-field emission from two-dimensional semimetals
- Thermalization of photoexcited carriers in two-dimensional transition metal dichalcogenides and internal quantum efficiency of van der Waals heterostructures
- Designing Few-layer Graphene Schottky Contact Solar Cell: Theoretical Efficiency Limits and Parametric Optimization
- Experimental characterization of thermionic surface cooling in thermionic discharge
- Designing a Concentrated High-Efficiency Thermionic Solar Cell Enabled by Graphene Collector
- Resonant field emission from noble-metal/graphene heterostructures