Electrically tunable plasma excitations in AA-stacking multilayer graphene
arXiv:1404.2682 · doi:10.1103/PhysRevB.86.125434
Abstract
We use a tight-binding model and the random-phase approximation to study the Coulomb excitations in simple-hexagonal-stacking multilayer graphene and discuss the field effects. The calculation results include the energy bands, the response functions, and the plasmon dispersions. A perpendicular electric field is predicted to induce significant charge transfer and thus capable of manipulating the energy, intensity, and the number of plasmon modes. This could be further validated by inelastic light scattering or electron-energy-loss spectroscopy.
References in corpus (7)
- The electronic properties of graphene
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Band Structure of ABC-Stacked Graphene Trilayers
- Electronic transport through bilayer graphene flakes
- Magneto-optical Selection Rules in Bilayer Bernal Graphene
- Multilayer graphene under vertical electric field
- Anomalous Angular Dependence of the Dynamic Structure Factor near Bragg Reflections: Graphite