Electron and hole lifetime in monolayer graphene

Abstract

Excited conduction electrons, conduction holes, and valence holes in monolayer electron-doped graphene exhibit unusual Coulomb decay rates. The deexcitation processes are studied using the screened exchange energy. They might utilize the intraband single-particle excitations (SPEs), the interband SPEs, and the plasmon modes, depending on the quasiparticle states and the Fermi energies. The low-lying valence holes can decay through the undamped acoustic plasmon, so that they present very fast Coulomb deexcitations, nonmonotonous energy dependence, and anisotropic behavior. However, the low-energy conduction electrons and holes are similar to those in a two-dimensional electron gas. The higher-energy conduction states and the deeper-energy valence ones behave similarly in the available deexcitation channels and have a similar dependence of decay rate on the wave vector $\mathbf{k}$.

References in corpus (11)

• Electron-electron interaction effects on optical excitations in semiconducting single-walled carbon nanotubes
• Interband Recombination Dynamics in Resonantly-Excited Single-Walled Carbon Nanotubes
• Observation of spin Coulomb drag in a two-dimensional electron gas
• Unconventional quasiparticle lifetime in graphite
• Electronic and optical properties of graphene nanoribbons in external fields
• First-Principles Study of Electron Linewidths in Graphene
• Anisotropic Electron-Phonon Coupling and Dynamical Nesting on the Graphene Sheets in CaC6
• Finite temperature inelastic mean free path and quasiparticle lifetime in graphene
• Anomalous Quasiparticle Lifetime in Graphite: Band Structure Effects
• Electrically tunable plasma excitations in AA-stacking multilayer graphene
• Coulomb scattering rates of excited states in germanene