Electron transport of WS${}_2$ transistors in a hexagonal boron nitride dielectric environment

Freddie Withers, Thomas Hardisty Bointon, David Christopher Hudson +2

We present the first study of the intrinsic electrical properties of WS${}_2$ transistors fabricated with two different dielectric environments WS${}_2$ on SiO${}_2$ and WS${}_2$ on h-BN/S…