activity
20132018
most citedDoes P-type Ohmic Contact Exist in WSe2-metal Interfaces?

211 citations · 1k across the 16 of their papers we have counts for

collaborators

16 papers

cond-mat.mtrl-sci2018★ 1 cited

Spontaneous Valley Splitting and Valley Pseudospin Field Effect Transistor of Monolayer VAgP2Se6

Zhigang Song, Xiaotian Sun, Jingshan Qi +6

Valleytronics is a rising topic to explore the emergent degree of freedom for charge carriers in energy band edges and has attracted a great interest due to many intriguing quantum…

cond-mat.mtrl-sci2015★ 211 cited

Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?

Yangyang Wang, Ruoxi Yang, Ruge Quhe +9

Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…

cond-mat.mes-hall2015★ 3 cited

Monolayer Phosphorene-Metal Interfaces

Yuanyuan Pan, Yangyang Wang, Meng Ye +9

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…

cond-mat.mtrl-sci2015★ 24 cited

Silicene on Substrates: A Theoretical Perspective

Hongxia Zhong, Ruge Quhe, Yangyang Wang +2

Silicene, as the silicon analog of graphene, has been successfully fabricated by epitaxial growing on various substrates. Similar to free-standing graphene, free-standing silicene…

cond-mat.mtrl-sci2015★ 1 cited

Silicene Spintronics

Yangyang Wang, Ruge Quhe, Dapeng Yu +2

Spintronics involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. The fascinating spin-resolved properties of graphene motivate n…

cond-mat.mtrl-sci2015★ 51 cited

Silicene Nanomesh

Feng Pan, Yangyang Wang, Kaili Jiang +8

Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal tha…