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20132018
most citedDoes P-type Ohmic Contact Exist in WSe2-metal Interfaces?

211 citations · 1k across the 16 of their papers we have counts for

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cond-mat.mes-hall2015★ 3 cited

Monolayer Phosphorene-Metal Interfaces

Yuanyuan Pan, Yangyang Wang, Meng Ye +9

Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…

cond-mat.mes-hall2015★ 14 cited

Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations

Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8

Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…

cond-mat.mes-hall2013★ 108 cited

Tunable band gap in germanene by surface adsorption

Meng Ye, Ruge Quhe, Jiaxin Zheng +7

Opening a sizable band gap in the zero-gap germanene without heavy loss of carrier mobility is a key issue for its application in nanoelectronic devices such as high-performance fi…

cond-mat.mes-hall2013★ 46 cited

Strong Band Hybridization between Silicene and Ag(111)Substrate

Yakun Yuan, Ruge Quhe, Jiaxin Zheng +4

By using first-principles calculations, we systematically investigated several observed phases of silicene on Ag(111) substrates and their electronic structures. We find that the o…

cond-mat.mes-hall2013

Tunable band gap in few-layer graphene by surface adsorption

Ruge Quhe, Jianhua Ma, Zesheng Zeng +8

There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires tw…