211 citations · 279 across the 6 of their papers we have counts for
6 papers
Does P-type Ohmic Contact Exist in WSe2-metal Interfaces?
Yangyang Wang, Ruoxi Yang, Ruge Quhe +9
Formation of low-resistance metal contacts is the biggest challenge that masks the intrinsic exceptional electronic properties of 2D WSe2 devices. We present the first comparative…
Monolayer Phosphorene-Metal Interfaces
Yuanyuan Pan, Yangyang Wang, Meng Ye +9
Recently, phosphorene electronic and optoelectronic prototype devices have been fabricated with various metal electrodes. We systematically explore for the first time the contact p…
Silicene Nanomesh
Feng Pan, Yangyang Wang, Kaili Jiang +8
Similar to graphene, zero band gap limits the application of silicene in nanoelectronics despite of its high carrier mobility. By using first-principles calculations, we reveal tha…
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
Hongxia Zhong, Zeyuan Ni, Yangyang Wang +8
Although many prototype devices based on two-dimensional (2D) MoS2 have been fabricated and wafer scale growth of 2D MoS2 has been realized, the fundamental nature of 2D MoS2-metal…
Does the Dirac Cone Exist in Silicene on Metal Substrates?
Ruge Quhe, Yakun Yuan, Jiaxin Zheng +6
Absence of the Dirac cone due to a strong band hybridization is revealed to be a common feature for epitaxial silicene on metal substrates according to our first-principles calcula…
Tunable band gap in few-layer graphene by surface adsorption
Ruge Quhe, Jianhua Ma, Zesheng Zeng +8
There is a tunable band gap in ABC-stacked few-layer graphene (FLG) via applying a vertical electric field, but the operation of FLG-based field effect transistor (FET) requires tw…