Prediction of C7N6 and C9N4: Stable and strong porous carbon-nitride nanosheets with attractive electronic and optical properties
arXiv:1908.03103 · doi:10.1039/C9TC03513C
Abstract
In this work, three novel porous carbon-nitride nanosheets with C7N6, C9N4 and C10N3 stoichiometries are predicted. First-principles simulations were accordingly employed to evaluate stability and explore the mechanical, electronic and optical properties. Phonon dispersions confirm the dynamical stability of all predicted nanosheets. Nonetheless, ab-initio molecular dynamics results indicate that only C7N6 and C9N4 are thermally stable. C7N6, C9N4 and C10N3 nanosheets were predicted to exhibit high elastic modulus of 212, 202 and 208 N/m and maximum tensile strengths of 14.1, 22.4 and 15.8 N/m, respectively. C7N6 monolayer was confirmed to be a direct band-gap semiconductor, with a 2.25 eV gap according to the HSE06 method estimation. Interestingly, C9N4 and C10N3 monolayers show metallic character. The first absorption peaks of optical spectra reveal that C7N6 nanosheet can absorb the visible light, whereas C9N4 and C10N3 monolayers can absorb the Infrared range of light. Moreover, the absorption coefficient and optical conductivity of predicted nanosheets in the visible range of light are larger than those of the graphene. The results provided by this study confirm the stability and highlight very promising properties of C7N6 and C9N4 nanosheets, which may serve as promising candidates for numerous advanced technologies.
References in corpus (15)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Tuning superconductivity in twisted bilayer graphene
- Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering
- High Electron Mobility, Quantum Hall Effect and Anomalous Optical Response in Atomically Thin InSe
- All-graphene integrated circuits via strain engineering
- Excitonic Effects on the Optical Response of Graphene and Bilayer Graphene
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Electron properties of fluorinated single-layer graphene transistors
- Ultra high stiffness and thermal conductivity of graphene like C3N
- First-principles investigation of mechanical properties of silicene, germanene and stanene
- Weak Localization and Transport Gap in Graphene Antidot Lattices
- Band Engineering of Carbon Nitride Monolayers by N-type, P-type, and Isoelectronic Doping for Photocatalytic Applications
- Anisotropic mechanical and optical response and negative Poissons ratio in Mo2C nanomembranes revealed by first-principles simulations
- A Structural Insight into Mechanical Strength of Graphene-like Carbon and Carbon Nitride Networks
Cited by in corpus (4)
- Exploring Phononic Properties of Two-Dimensional Materials using Machine Learning Interatomic Potentials
- Exploring thermal expansion of carbon-based nanosheets by machine-learning interatomic potentials
- Navigating the Evolution of Two-dimensional Carbon Nitride Research: Integrating Machine Learning into Conventional Approaches
- Study of BCN-bilayer graphene: Effects of atomic spacing and interatomic interaction between B and N atoms