Spin qubits in antidot lattices

Abstract

We suggest and study designed defects in an otherwise periodic potential modulation of a two-dimensional electron gas as an alternative approach to electron spin based quantum information processing in the solid-state using conventional gate-defined quantum dots. We calculate the band structure and density of states for a periodic potential modulation, referred to as an antidot lattice, and find that localized states appear, when designed defects are introduced in the lattice. Such defect states may form the building blocks for quantum computing in a large antidot lattice, allowing for coherent electron transport between distant defect states in the lattice and tunnel coupling of neighboring defect states with corresponding electrostatically controllable exchange coupling between different electron spins.

9 pages, 9 figures

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Cited by in corpus (8)

• Graphene Antidot Lattices - Designed Defects and Spin Qubits
• Electronic properties of graphene antidot lattices
• Graphene antidot lattice waveguides
• Electron-Electron Interactions in Artificial Graphene
• Band gaps in graphene via periodic electrostatic gating
• Quantum random walks without walking
• Correlated physics in an artificial triangular anti-dot lattice
• Small scale lateral superlattices in two-dimensional electron gases prepared by diblock copolymer masks