activity
20082018
most citedTop-gated graphene field-effect-transistors formed by decomposition of SiC

222 citations · 489 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2018★ 41 cited

High mobility InAs 2DEGs on GaSb substrates: a platform for mesoscopic quantum transport

C. Thomas, A. T. Hatke, A. Tuaz +7

High mobility, strong spin-orbit coupling, and large Landé g-factor make the two-dimensional electron gas (2DEG) in InAs quantum wells grown on nearly-lattice-matched GaSb substrat…

cond-mat.mes-hall2011★ 15 cited

Quantum-Hall plateau-plateau transition in top-gated epitaxial graphene grown on SiC (0001)

Tian Shen, Adam T. Neal, Michael L. Bolen +4

We investigate the low-temperature magneto-transport properties of monolayer epitaxial graphene films formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperatu…

cond-mat.mes-hall2009★ 116 cited

Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)

T. Shen, J. J. Gu, M. Xu +5

Epitaxial graphene films were formed on the Si-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. A high-k gate stack on epitaxial graphene is rea…

cond-mat.mes-hall2008★ 95 cited

Magneto-conductance Oscillations in Graphene Antidot Arrays

T. Shen, Y. Q. Wu, M. A. Capano +3

Epitaxial graphene films have been formed on the C-face of semi-insulating 4H-SiC substrates by a high temperature sublimation process. Nano-scale square antidot arrays have been f…

cond-mat.mes-hall2008★ 222 cited

Top-gated graphene field-effect-transistors formed by decomposition of SiC

Y. Q. Wu, P. D. Ye, M. A. Capano +4

Top-gated, few-layer graphene field-effect transistors (FETs) fabricated on thermally-decomposed semi-insulating 4H-SiC substrates are demonstrated. Physical vapor deposited SiO2 i…