Mimicking Nanoribbon Behavior Using a Graphene Layer on SiC
arXiv:1008.2998 · doi:10.1103/PhysRevB.82.153402
Abstract
We propose a natural way to create quantum-confined regions in graphene in a system that allows large-scale device integration. We show, using first-principles calculations, that a single graphene layer on a trenched region of mimics i)the energy bands around the Fermi level and ii) the magnetic properties of free-standing graphene nanoribbons. Depending on the trench direction, either zigzag or armchair nanoribbons are mimicked. This behavior occurs because a single graphene layer over a surface loses the graphene-like properties, which are restored solely over the trenches, providing in this way a confined strip region.
4 pages, 4 figures
References in corpus (11)
- The electronic properties of graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Energy Gaps in Graphene Nanoribbons
- Half-Metallic Graphene Nanoribbons
- Ultrathin epitaxial graphite: 2D electron gas properties and a route toward graphene-based nanoelectronics
- Room Temperature All Semiconducting sub-10nm Graphene Nanoribbon Field-Effect Transistors
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- Ab initio Study of Graphene on SiC
- Top-gated graphene field-effect-transistors formed by decomposition of SiC
- The structural properties of the multi-layer graphene/4H-SiC(000-1) system as determined by Surface X-ray Diffraction
- The interface structure of epitaxial graphene grown on 4H-SiC(0001)