1.3k citations · 3.2k across the 12 of their papers we have counts for
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cond-mat.mes-hall2011★ 100 cited
First Experimental Demonstration of Gate-all-around III-V MOSFET by Top-down Approach
Jiangjiang Gu, Yiqun Liu, Yanqing Wu +3
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN g…
cond-mat.mes-hall2011★ 94 cited
Enhanced Performance in Epitaxial Graphene FETs with Optimized Channel Morphology
Yu-Ming Lin, Damon B. Farmer, Keith A. Jenkins +7
This letter reports the impact of surface morphology on the carrier transport and RF performance of graphene FETs formed on epitaxial graphene films synthesized on SiC substrates.…