Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides
arXiv:1901.04391 · doi:10.1103/PhysRevB.99.085412
Abstract
Monolayer Transition Metal Dichalcogenides (TMDS) are highly luminescent materials despite being sub-nanometer thick due to the ultra-short ( ps) radiative lifetime of the strongly bound bright excitons hosted by these materials. The intrinsically short radiative lifetime results in a large broadening in the exciton band with a magnitude that is about two orders greater than the spread of the light cone itself. The situation calls for a need to revisit the conventional light cone picture. We present a modified light cone concept which places the light line as the generalized lower bound for allowed radiative recombination. A self-consistent methodology, which becomes crucial upon inclusion of large radiative broadening in the exciton band, is proposed to segregate the radiative and the non-radiative components of the homogeneous exciton linewidth. We estimate a fundamental radiative linewidth of meV, owing purely to finite radiative lifetime in the absence of non-radiative dephasing processes. As a direct consequence of the large radiative limit, we find a surprisingly large ( meV) linewidth broadening due to zero-point energy of acoustic phonons. This obscures the precise experimental determination of the intrinsic radiative linewidth and sets a fundamental limit on the non-radiative linewidth broadening at K.
References in corpus (7)
- Tightly bound excitons in monolayer WSe2
- Strong light-matter coupling in two-dimensional atomic crystals
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Probing Excitonic Dark States in Single-layer Tungsten Disulfide
- Exciton band structure of monolayer MoS2
- {\it Ab--initio} finite temperature excitons
- Trion Species-Resolved Quantum Beats in MoSe2
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- Observation of ~100% valley-coherent excitons in monolayer MoS2 through giant enhancement of valley coherence time
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