Exciton diffusion in a hBN-encapsulated monolayer MoSe2

Abstract

Excitons, quasi particles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in a monolayer MoSe2 encapsulated between flakes of hexagonal boron nitrides (hBN/MoSe2/hBN). Through PL imaging and numerical solving the 2D diffusion equation, we revealed that temperature dependence of exciton mobility in the hBN/MoSe2/hBN shows non-saturating increase at low temperature, which is qualitatively different from those of quantum wells composed of compound semiconductors. Ultraflat structure of monolayer MoSe2 in the hBN/MoSe2/hBN probably leads to the suppression of charged-impurity scattering and surface-roughness scattering.

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Cited by in corpus (4)

• Spatiotemporally Controlled Room Temperature Exciton Transport under Dynamic Pressure
• Optical detection of long electron spin transport lengths in a monolayer semiconductor
• Spatiotemporal dynamics of free and bound excitons in CVD-grown MoS${}_2$ monolayer
• Trion-phonon interaction in atomically thin semiconductors