Imaging dynamic exciton interactions and coupling in transition metal dichalcogenides
arXiv:2202.09089 · doi:10.1063/5.0087544
Abstract
Transition metal dichalcogenides (TMDs) are regarded as a possible materials platform for quantum information science and related device applications. In TMD monolayers, the dephasing time and inhomogeneity are crucial parameters for any quantum information application. In TMD heterostructures, coupling strength and interlayer exciton lifetimes are also parameters of interest. However, many demonstrations in TMDs can only be realized at specific spots on the sample, presenting a challenge to the scalability of these applications. Here, using multi-dimensional coherent imaging spectroscopy (MDCIS), we shed light on the underlying physics - including dephasing, inhomogeneity, and strain - for a MoSe monolayer and identify both promising and unfavorable areas for quantum information applications. We furthermore apply the same technique to a MoSe/WSe heterostructure. Despite the notable presence of strain and dielectric environment changes, coherent and incoherent coupling, as well as interlayer exciton lifetimes are mostly robust across the sample. This uniformity is despite a significantly inhomogeneous interlayer exciton photoluminescence distribution that suggests a bad sample for device applications. This robustness strengthens the case for TMDs as a next-generation materials platform in quantum information science and beyond.
References in corpus (25)
- Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
- Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
- Solar-energy conversion and light emission in an atomic monolayer p-n diode
- Excitonic linewidth approaching the homogeneous limit in MoS2 based van der Waals heterostructures : accessing spin-valley dynamics
- Determination of band alignment in the single layer MoS2/WSe2 heterojunction
- Intrinsic Exciton Linewidth in Monolayer Transition Metal Dichalcogenides
- Long-lived direct and indirect interlayer excitons in van der Waals heterostructures
- Atomically thin quantum light emitting diodes
- Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
- Control of interlayer excitons in two-dimensional van der Waals heterostructures
- Twist Angle Dependent Interlayer Exciton Lifetimes in van der Waals Heterostructures
- Direct exciton emission from atomically thin transition metal dichalcogenide heterostructures near the lifetime limit
- Probing the inter-layer exciton physics in a MoS/MoSe/MoS van der Waals heterostructure
- Spatially-resolved Fluorescence-detected Two-dimensional Electronic Spectroscopy Probes Varying Electronic Couplings in Photosynthetic Bacteria
- Spin-layer locking of interlayer excitons trapped in moiré potentials
- Coherent and Incoherent Coupling Dynamics between Neutral and Charged Excitons in Monolayer MoSe2
- Impact of strain on the excitonic linewidth in transition metal dichalcogenides
- Enhanced interlayer neutral excitons and trions in trilayer van der Waals heterostructures
- Ultrafast charge-transfer dynamics in twisted MoS/WSe heterostructures
- Encapsulation Narrows Excitonic Homogeneous Linewidth of Exfoliated MoSe Monolayer
- Coherence Length of Excitons in a Semiconductor Quantum Well
- Hidden Silicon-Vacancy Centers in Diamond
- Coherent dynamics and mapping of excitons in single-layer MoSe and WSe at the homogeneous limit
- Coherent exciton-exciton interactions and exciton dynamics in a MoSe\textsubscript{2}/WSe\textsubscript{2} heterostructure
- Fundamental exciton linewidth broadening in monolayer transition metal dichalcogenides