Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide

Abstract

Room temperature optically detected magnetic resonance experiments on spin 3/2 Silicon vacancies in 4H-SiC are reported. The $m_s=+1/2\leftrightarrow -1/2$ transition is accessed using a two microwave frequency excitation protocol. The ratio of the Rabi frequencies of the $+3/2\leftrightarrow +1/2$ and $+1/2\leftrightarrow -1/2$ transitions is measured to be $(0.901\pm 0.013)$. The deviation from $\sqrt{3}/2$ is attributed to small difference in g-factor for different magnetic dipole transitions. Whereas a spin-1/2 system is characterized by a single spin lifetime $T_1$, we experimentally demonstrate that the spin 3/2 system has three distinct relaxation modes that can be preferentially excited and detected. The measured relaxation times are $(0.41\pm 0.02)T_{slow}=T_d=(3.3\pm 0.5)T_{fast}$. This differs from the values of $T_p/3=T_d=2T_f$ expected for pure dipole ($T_p$), quadrupole ($T_d$), and octupole ($T_f$) relaxation modes, respectively, and implies admixing of the slow dipole and fast octupole relaxation modes.

arXiv comment3 figs, 6 pages, updated

References in corpus (15)

• Coherent control of single spins in silicon carbide at room temperature
• High-fidelity spin and optical control of single silicon vacancy centres in silicon carbide
• Electrical and optical control of single spins integrated in scalable semiconductor devices
• Single-photon emitting diode in silicon carbide
• All-optical dc nanotesla magnetometry using silicon vacancy fine structure in isotopically purified silicon carbide
• Silicon Carbide Photonic Crystal Cavities with Integrated Color Centers
• Identification of Si-vacancy related room temperature qubits in 4H silicon carbide
• Excitation and coherent control of spin qudit modes with sub-MHz spectral resolution
• Spin Coherence and Echo Modulation of the Silicon Vacancy in 4H-SiC at Room Temperature
• Vector magnetometry using silicon vacancies in 4H-SiC at ambient conditions
• Spin and optical properties of silicon vacancies in silicon carbide (a review)
• Resonant optical spin initialization and readout of single silicon vacancies in 4H-SiC
• Influence of irradiation on defect spin coherence in silicon carbide
• Electrometry by optical charge conversion of deep defects in 4H-SiC
• Spin coherence as a function of depth for high-density ensembles of silicon vacancies in proton-irradiated 4H-SiC

Cited by in corpus (4)

• Exhaustive characterization of modified Si vacancies in 4H-SiC
• Optical spin initialization of spin-3/2 silicon vacancy centers in 6H-SiC at room temperature
• Low-field microwave-free sensors using dipolar spin relaxation of quartet spin states in silicon carbide
• Spin-3/2 nuclear magnetic resonance: Exact solutions for aligned systems and implications for probing Fe-based superconductors