353 citations · 774 across the 9 of their papers we have counts for
9 papers
Formation of carbon interstitial-related defect levels by thermal injection of carbon into -type 4-SiC
Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov +1
Electrical properties of point defects in 4-SiC have been studied extensively, but those related to carbon interstitials (C) have remained surprisingly elusive until now.…
Strain modulation of Si vacancy emission from SiC micro- and nanoparticles
G. C. Vásquez, M. E. Bathen, A. Galeckas +8
Single-photon emitting point defects in semiconductors have emerged as strong candidates for future quantum technology devices. In the present work, we exploit crystalline particle…
Broad diversity of near-infrared single-photon emitters in silicon
A. Durand, Y. Baron, W. Redjem +11
We report the detection of individual emitters in silicon belonging to seven different families of optically-active point defects. These fluorescent centers are created by carbon i…
High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates
D. Gogova, V. S. Olsen, C. Bazioti +4
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering…
Single artificial atoms in silicon emitting at telecom wavelengths
W. Redjem, A. Durand, T. Herzig +15
Given its unrivaled potential of integration and scalability, silicon is likely to become a key platform for large-scale quantum technologies. Individual electron-encoded artificia…
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…