353 citations · 774 across the 9 of their papers we have counts for
5 papers · 1 filter
Formation of carbon interstitial-related defect levels by thermal injection of carbon into -type 4-SiC
Robert Karsthof, Marianne Etzelmüller Bathen, Andrej Kuznetsov +1
Electrical properties of point defects in 4-SiC have been studied extensively, but those related to carbon interstitials (C) have remained surprisingly elusive until now.…
High electron mobility single-crystalline ZnSnN2 on ZnO (0001) substrates
D. Gogova, V. S. Olsen, C. Bazioti +4
Making a systematic effort, we have developed a single-crystalline ZnSnN2 on ZnO (0001) by reactive magnetron co-sputtering. Epitaxial growth was achieved at 350 C by co-sputtering…
GaZn-VZn acceptor complex defect in Ga-doped ZnO
Aihua Tang, Zengxia Mei, Yaonan Hou +5
Identification of complex defect has been a long-sought-after physics problem for controlling the defect population and engineering the useful properties in wide bandgap oxide semi…
Oxygen vacancies: The origin of n-type conductivity in ZnO
Lishu Liu, Zengxia Mei, Aihua Tang +4
Oxygen vacancy (VO) is a common native point defects that plays crucial roles in determining the physical and chemical properties of metal oxides such as ZnO. However, fundamental…
Fluorine doping: A feasible solution to enhancing the conductivity of high-resistance wide bandgap Mg0.51Zn0.49O active components
Lishu Liu, Zengxia Mei, Yaonan Hou +5
N-type doping of high-resistance wide bandgap semiconductors, wurtzite high-Mg-content MgxZn1-xO for instance, has always been a fundamental application-motivated research issue. H…